Low-Current, SPI-Compatible
Real-Time Clock
Maxim Integrated
13
DS1347
1
D7
D6
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
ADDRESS/COMMAND BYTE*
DATA BYTE 1
DATA BYTE N
HIGH IMPEDANCE; NO ACTIVITY ON DOUT LINE DURING WRITES.
D1
D0
R/W
A6
CS
SCLK
DIN
DOUT
*ONLY ONE ADDRESS/COMMAND BYTE IS REQUIRED PER BURST TRANSACTION.
Figure 1b. Burst Write
SCLK
R/W
A6
A5
A4
A3
A2
A1
1
D7
D6
D5
D4
D3
D2
D1
D0
DIN
DOUT
ADDRESS/COMMAND BYTE
DATA BYTE
HIGH IMPEDANCE; NO ACTIVITY ON DOUT LINE DURING WRITES.
CS
Figure 1a. Single Write
microcontroller, is active only during address and data
transfer to any device on the SPI bus. The inactive clock
polarity is usually programmable on the microcontroller
side of the SPI interface. In the device, input data is
latched on the positive edge, and output data is shifted
out on the negative edge. There is one clock cycle for
each bit transferred. Address and data bits are trans-
ferred in groups of eight.
The SPI protocol allows for one of four combinations of
serial clock phase and polarity from the microcontroller,
through a 2-bit selection in its SPI Control register. The
clock polarity is specified by the CPOL Control bit,
which selects active-high or active-low clock, and has
no significant effect on the transfer format. The clock
phase control bit, CPHA, selects one of two different
transfer formats. The clock phase and polarity must be
identical for the master and the slave. For the device,
set the control bits to CPHA = 1 and CPOL = 1. This
configures the system for data out to be launched on
the negative edge of SCLK and data in to be sampled
on the positive edge. With CPHA equal to 1, CS can
remain low between successive data byte transfers,
allowing burst-mode data transfers to occur.
Address and data bytes are shifted MSB first into DIN
of the device, and out of DOUT. Data is shifted out at
the negative edge of SCLK, and shifted in or sampled
at the positive edge of SCLK. Any transfer requires an
address/command byte followed by one or more
bytes of data. Data is transferred out of DOUT for a
read operation, and into DIN for a write operation.
DOUT transmits data only after an address/command
byte specifies a read operation; otherwise, it is high
impedance.
Data transfer write timing is shown in Figure 1. Data
transfer read timing is shown in Figure 2. Detailed read
and write timing is shown in Figure 3.
相关PDF资料
DS1371U+C01 IC BINARY COUNTER 32-BIT 8-USOP
DS1372U+T&R IC BINARY COUNTER 32-BIT 8-USOP
DS1374C-3# IC RTC I2C W/CHARGER 16-SOIC
DS1375T+ IC RTC SERIAL W/ALARM 6-TDFN
DS1384FP-12+ IC CTRLR RTC WDOG 120NS 44-MQFP
DS1386P-8-120+ IC TIMEKEEPER RAM 64K 34-PCM
DS1388Z-3+T&R IC RTC I2C W/CHARGER 8-SOIC
DS1391U-3+ IC RTC W/CHARGER 10-USOP
相关代理商/技术参数
DS1347T+T&R 制造商:Maxim Integrated Products 功能描述:LOW POWER SPI RTC FOR 12.5PF CRYSTA - Tape and Reel 制造商:Maxim Integrated Products 功能描述:IC RTC/CALENDAR SPI 8TDFN 制造商:Maxim Integrated Products 功能描述:Real Time Clock Low Power SPI RTC For 12.5Pf Crystal
DS1347T+T&R 功能描述:实时时钟 Low Power SPI RTC For 12.5Pf Crystal RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube
DS135 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:1.0A Power Rectifier
DS1350AB 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor
DS1350AB-100 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor
DS1350AB-70 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor
DS1350ABL-100 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1350ABL-100-IND 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)